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2SK2225
Silicon N Channel MOS FET
REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
D 1. Gate 2. Drain 3. Source
G
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2225
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 1500 20 2 7 2 50 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 -- -- 2.0 -- 0.45 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max -- 1 500 4.0 12 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS =1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 15 V*3 ID = 1 A, VDS = 20 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30
IF = 2 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2225
Main Characteristics
Power vs. Temperature Derating
80 10 3 60
0 10
Maximum Safe Operation Area
10
PW
Channel Dissipation Pch (W)
s
Drain Current ID (A)
1 0.3 0.1 0.03
=
1
10 m s
s
m
(1
s
C D r pe O
40
sh
ot
20
Operation in this area is limited by RDS(on)
Ta = 25C 0 50 100 150 200 0.01 10 30 100 300 1000 3000 10000
n io at (T c =
)
) C 25
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
5 Pulse Test 7V 3 6V 15 V 2.0 10 V 8V
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
4
1.6
VDS = 25 V Pulse Test
1.2
2
0.8 Tc = 75C 25C -25C
1
5V
VGS = 4 V
0.4
0
20
40
60
80
100
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
50 Pulse Test 40 ID = 3 A 30 2A 1A 0.5 A 0 4 8 12 16 20
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
50 20 10 5
Drain to Source Saturation Voltage VDS (on) (V)
Static Drain to Source on State Resistance RDS (on) ()
VGS = 10 V
15 V
20
2 Pulse Test 1 0.5 0.1
10
0.2
0.5
1
2
5
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2225
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
20 ID = 2 A 10 5 2 1 0.5
VDS = 25 V Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
16
12
0.5 A, 1 A
Tc = -25C 25C 75C
8
4 0 -40
VGS = 15 V Pulse Test
0.2 0.1 0.05
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
5000 10000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2000 1000 500
1000
Ciss
200 100 50
di / dt = 100 A / s, Ta = 25C VGS = 0, Pulse Test
100
Coss Crss
10
0.05 0.1
0.2
0.5
1
2
5
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
20
1000
Gate to Source Voltage VGS (V)
Switching Time t (ns)
800
VDD = 250 V 400 V 600 V VDS
500
16
VGS
td(off)
200 100
VGS = 10 V PW = 2 s duty < 1 %
600
12
400
8
VDD = 250 V 400 V 600 V
tf
50
tr td(on)
200
ID = 2.5 A 60 80
4
20 10
0
20
40
0 100
0.05 0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2225
Reverse Drain Current vs. Source to Drain Voltage
5
Reverse Drain Current IDR (A)
Pulse Test 4
3
2
1
10 V, 15 V
VGS = 0, -5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance S (t)
3 Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 2.50C/W, Tc = 25C
PDM
0.03
0.02 0.01
1 sh p ot
D=
PW T
PW T
uls
e
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor Vin Vout Vin 10 V 50 10% 10%
Waveforms 90%
10%
90% td(on)
90% td(off) tf
tr
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2225
Package Dimensions
JEITA Package Code
SC-93
RENESAS Code
PRSS0003ZA-A
Package Name TO-3PFM / TO-3PFMV
MASS[Typ.] 5.2g
Unit: mm
5.0 0.3
5.5 0.3
15.6 0.3 3.2
+ 0.4 - 0.2
5.0 0.3 19.9 0.3
2.0 0.3
2.7 0.3
0.66 5.45 0.5
+ 0.2 - 0.1
21.0 0.5
4.0 0.3 2.6 0.86
3.2 0.3 1.6 0.86
0.2 0.9 + 0.1 -
5.45 0.5
Ordering Information
Part Name 2SK2225-E Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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